Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes

Authors :: Stroud, R. M.
Hanbicki, A. T.
Park, Y. D.
Kioseoglou, G.
Petukhov, A. G.
Jonker, B. T.
Itskos, Grigorios
Petrou, Athos Chariton
Itskos, Grigorios [0000-0003-3971-3801]
Source :: Physical Review Letters, Phys.Rev.Lett.
Publication Year :: 2002
Abstract: The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization correlates inversely with the density of linear defects resulting from stacking faults at the ZnMnSe/AlGaAs interface. 89 16 166602/1 166602/4 Cited By :87

Subjects :: Photolithography
Multichamber system
Spin-flip scattering
Chemical etching technique
Semiconducting gallium arsenide
Electrons
Semiconducting aluminum compounds
Light emitting diodes
Etching
Interfaces (materials)
Defects
Electron injection
Spin injection efficiency
Semiconducting zinc compounds
Microstructure
Semiconductor quantum wells
Molecular beam epitaxy
Light polarization
Quantum selection rule

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