Compatibility of CMOS technology with QD-based devices

This work reports the CMOS compatible and monolithic fabrication of a conventional planar field effect transistor (FET) co-integrated with a quantum dot (QD) based single electron transistor (SET). The FET process fabrication is adapted to fulfill the restrictions imposed by the pre-fabricated SET, such as reduced thermal budget, extra protection layers and modified doping in order to obtain low threshold voltage. The resulting FET presents good subthreshold characteristics and the SET preserves its integrity at the end of the fabrication.