New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology

Magnetotransport studies at low and room temperature are presented for two-dimensional hole gases (2DHG) formed in fully strained germanium (sGe) quantum wells (QW). Two designs of modulation doped heterostructure grown by reduced pressure chemical vapour deposition (RP-CVD) were used and included a normal structure (doping above the Ge channel and inverted structure (doping beneath the Ge channel). The mobility (μH) for the normal structure was measured to be 1.34×106 cm2/Vs with a sheet density (ps) of 2.9×1011 cm-2 at 1.5 K, and μH = 3970 cm2/Vs and ps ~1×1011 cm-2 for room temperature, determined from simulation using the Maximum Entropy- Mobility Spectrum Analysis (ME-MSA) method. For the inverted structure a μH of 4.96×105 cm2/Vs and ps of 5.25×1011 cm-2 was measured at 90 mK. From the temperature dependent amplitude of Shubnikov de Haas oscillations, the normal structure was found to have a very low effective mass (m*) value of 0.063 m0 and a ratio of transport to quantum lifetime (α) of ~78. This extremely high α is indicative of the carrier transport being dominated by small angle scattering from remote impurities i.e. a sample having an extremely low background impurity level and very smooth hetero-interfaces. The inverted structure had an m* of 0.069 m0 and α ~29, which also indicates exceedingly high quality material.