Cite
A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS
MLA
Zheng, Yang, et al. “A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS.” Advanced Materials (Deerfield Beach, Fla.), vol. 31, no. 25, Dec. 2018. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.pmid..........5c964637d9c7a87e6da27f3865c11960&authtype=sso&custid=ns315887.
APA
Zheng, Y., Changsik, K., Kwang Young, L., Myeongjin, L., Samudrala, A., Chang-Ho, R., Kenji, W., Takashi, T., Kyeongjae, C., Euyheon, H., James, H., & Won Jong, Y. (2018). A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS. Advanced Materials (Deerfield Beach, Fla.), 31(25).
Chicago
Zheng, Yang, Kim Changsik, Lee Kwang Young, Lee Myeongjin, Appalakondaiah Samudrala, Ra Chang-Ho, Watanabe Kenji, et al. 2018. “A Fermi-Level-Pinning-Free 1D Electrical Contact at the Intrinsic 2D MoS.” Advanced Materials (Deerfield Beach, Fla.) 31 (25). http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.pmid..........5c964637d9c7a87e6da27f3865c11960&authtype=sso&custid=ns315887.