Reservoir Computing with Charge-Trap Memory Based on a MoS

Novel memory devices are essential for developing low power, fast, and accurate in-memory computing and neuromorphic engineering concepts that can compete with the conventional complementary metal-oxide-semiconductor (CMOS) digital processors. 2D semiconductors provide a novel platform for advanced semiconductors with atomic thickness, low-current operation, and capability of 3D integration. This work presents a charge-trap memory (CTM) device with a MoS