Precise half-life measurement of the 26Si ground state

Authors :: Matea, I.
Souin, J.
Aysto, J.
Blank, B.
Delahaye, P.
Elomaa, V. -V.
Eronen, T.
Giovinazzo, J.
Hager, U.
Hakala, J.
Huikari, J.
Jokinen, A.
Kankainen, A.
Moore, I. D.
Pedroza, J. -L.
Rahaman, S.
Rissanen, J.
Ronkainen, J.
Saastamoinen, A.
Sonoda, T.
Weber, C.
Source :: Eur.Phys.J.A37:151-158,2008; Erratum-ibid.38:247,2008
Publication Year :: 2008
Abstract: The beta-decay half-life of 26Si was measured with a relative precision of 1.4*10e3. The measurement yields a value of 2.2283(27) s which is in good agreement with previous measurements but has a precision that is better by a factor of 4. In the same experiment, we have also measured the non-analogue branching ratios and could determine the super-allowed one with a precision similar to the previously reported measurements. The experiment was done at the Accelerator Laboratory of the University of Jyvaskyla where we used the IGISOL technique with the JYFLTRAP facility to separate pure samples of 26Si.<br />Comment: 8 pages, 7 figures; accepted by EPJA

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