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Top-gated graphene field-effect-transistors formed by decomposition of SiC
- Source :
- Applied Physics Letters 92, 092192 (2008)
- Publication Year :
- 2008
-
Abstract
- Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions unique transport properties in graphene layers. The measured electron and hole mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400 cm2/Vs respectively, which are much larger than the corresponding values from conventional SiC or silicon.
Details
- Database :
- arXiv
- Journal :
- Applied Physics Letters 92, 092192 (2008)
- Publication Type :
- Report
- Accession number :
- edsarx.0802.4103
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.2889959