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Remote hole-doping of Mott insulators on the nanometer scale
- Source :
- Phys. Rev. Lett. 102, 236401 (2009)
- Publication Year :
- 2008
-
Abstract
- At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Lett. 102, 236401 (2009)
- Publication Type :
- Report
- Accession number :
- edsarx.0806.2191
- Document Type :
- Working Paper