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Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy
- Source :
- Appl. Phys. Lett. 95, 112102 (2009)
- Publication Year :
- 2009
-
Abstract
- Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.<br />Comment: 4 pages, 4 figures, submitted to Phys. Rev. Lett.
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 95, 112102 (2009)
- Publication Type :
- Report
- Accession number :
- edsarx.0904.2364
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.3224914