Back to Search Start Over

Bistable hysteresis and resistance switching in hydrogen gold junctions

Authors :
Trouwborst, M. L.
Huisman, E. H.
van der Molen, S. J.
van Wees, B. J.
Source :
Physical Review B 80, 081407 (R) (2009)
Publication Year :
2009

Abstract

Current-voltage characteristics of H2-Au molecular junctions exhibit intriguing steps around a characteristic voltage of 40 mV. Surprisingly, we find that a hysteresis is connected to these steps with a typical time scale > 10 ms. This time constant scales linearly with the power dissipated in the junction beyond an ofset power P_s = IV_s. We propose that the hysteresis is related to vibrational heating of both the molecule in the junction and a set of surrounding hydrogen molecules. Remarkably, we can engineer our junctions such that the hysteresis' characteristic time becomes >days. We demonstrate that reliable switchable devices can be built from such junctions.<br />Comment: Submitted to Phys. Rev. Lett

Details

Database :
arXiv
Journal :
Physical Review B 80, 081407 (R) (2009)
Publication Type :
Report
Accession number :
edsarx.0906.5006
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.80.081407