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Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films
- Source :
- Ferroelectrics 392, 3 (2009)
- Publication Year :
- 2009
-
Abstract
- The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.<br />Comment: 24 pages, 8 figures, submitted to Ferroelectrics
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Ferroelectrics 392, 3 (2009)
- Publication Type :
- Report
- Accession number :
- edsarx.0909.1637
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1080/00150190903412358