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Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Authors :
Deon, F.
Pellegrini, V.
Carillo, F.
Giazotto, F.
Sorba, L.
Biasiol, G.
Beltram, F.
Source :
Appl. Phys. Lett. 96, 142107 (2010)
Publication Year :
2010

Abstract

The magnetic-field evolution of Coulomb blockade peaks in lateral InGaAs/InAlAs quantum dots in the few-electron regime is reported. Quantum dots are defined by gates evaporated onto a 60 nm-thick hydrogen silsesquioxane insulating film. A gyromagnetic factor of 4.4 is measured via zero-bias spin spectroscopy and a transition from singlet to triplet spin configuration is found at an in-plane magnetic field B = 0.7 T. This observation opens the way to the manipulation of singlet and triplet states at moderate fields and its relevance for quantum information applications will be discussed.<br />Comment: 4 pages, 3 figures

Details

Database :
arXiv
Journal :
Appl. Phys. Lett. 96, 142107 (2010)
Publication Type :
Report
Accession number :
edsarx.1002.3736
Document Type :
Working Paper
Full Text :
https://doi.org/10.1063/1.3380821