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Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
- Source :
- Appl. Phys. Lett. 97, 143118 (2010)
- Publication Year :
- 2010
-
Abstract
- Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.<br />Comment: 13 pages, 3 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 97, 143118 (2010)
- Publication Type :
- Report
- Accession number :
- edsarx.1007.0809
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.3494595