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Anomalous Hall effect in field-effect structures of (Ga,Mn)As
- Source :
- Physical Review Letters 104, 106601 (2010)
- Publication Year :
- 2011
-
Abstract
- The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated temperature dependence, including a change of sign, of the anomalous Hall conductance $\sigma_{xy}$ has been found in samples with the highest Curie temperatures. For more disordered channels, the scaling relation between $\sigma_{xy}$ and $\sigma_{xx}$, similar to the one observed previously for thicker samples, is recovered.<br />Comment: 5 pages, 5 figures
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Physical Review Letters 104, 106601 (2010)
- Publication Type :
- Report
- Accession number :
- edsarx.1101.0652
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevLett.104.106601