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Mechanisms of enhanced orbital dia- and paramagnetism: Application to the Rashba semiconductor BiTeI
- Source :
- Phys. Rev. Lett. 108, 247208 (2012)
- Publication Year :
- 2011
-
Abstract
- We study the magnetic susceptibility of a layered semiconductor BiTeI with giant Rashba spin splitting both theoretically and experimentally to explore its orbital magnetism. Apart from the core contributions, a large temperature-dependent diamagnetic susceptibility is observed when the Fermi energy E_F is near the crossing point of the conduction bands, while the susceptibility turns to be paramagnetic when E_F is away from it. These features are consistent with first-principles calculations, which also predict an enhanced orbital magnetic susceptibility with both positive and negative signs as a function of E_F due to band (anti)crossings. Based on these observations, we propose two mechanisms for an enhanced paramagnetic orbital susceptibility.<br />Comment: 4 figures; added references
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Lett. 108, 247208 (2012)
- Publication Type :
- Report
- Accession number :
- edsarx.1111.5800
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevLett.108.247208