Back to Search
Start Over
Size Distribution and Its Scaling Behavior of InAlAs/AlGaAs Quantum Dots Grown on GaAs by Molecular Beam Epitaxy
- Publication Year :
- 2012
-
Abstract
- We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{\deg}C and 510{\deg}C, as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for the two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a character of i = 0 was also found as a tail in the large volume.<br />Comment: 19 pages, 6 figures
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1208.0109
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.7567/JJAP.52.025602