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Semiconductor phonon and charge transport Monte Carlo simulation using Geant4

Authors :
Brandt, D.
Agnese, R.
Redl, P.
Schneck, K.
Asai, M.
Kelsey, M.
Faiez, D.
Bagli, E.
Cabrera, B.
Partridge, R.
Saab, T.
Sadoulet, B.
Publication Year :
2014

Abstract

A phonon and charge transport simulation based on the Geant4 Monte Carlo toolkit is presented. The transport code is capable of propagating acoustic phonons, electrons and holes in cryogenic crystals. Anisotropic phonon propagation, oblique carrier propagation and phonon emission by accelerated carriers are all taken into account. The simulation successfully reproduces theoretical predictions and experimental observations such as phonon caustics, heat pulse propagation times and mean carrier drift velocities. Implementation of the transport code using the Geant4 toolkit ensures availability to the wider scientific community.<br />Comment: 5 pages, 5 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.1403.4984
Document Type :
Working Paper