Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

MLA

Alassaad, Kassem, et al. Ge Incorporation inside 4H-SiC during Homoepitaxial Growth by Chemical Vapor Deposition. 2014. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1407.3222&authtype=sso&custid=ns315887.

APA

Alassaad, K., Soulière, V., Cauwet, F., Peyre, H., Carole, D., Kwasnicki, P., Juillaguet, S., Kups, T., Pezoldt, J., & Ferro, G. (2014). Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

Chicago

Alassaad, Kassem, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, Pawel Kwasnicki, Sandrine Juillaguet, Thomas Kups, Jörg Pezoldt, and Gabriel Ferro. 2014. “Ge Incorporation inside 4H-SiC during Homoepitaxial Growth by Chemical Vapor Deposition.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.1407.3222&authtype=sso&custid=ns315887.