Cite
Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
MLA
Chang, Cui-Zu, et al. Chemical Potential Dependent Gap-Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms. 2014. EBSCOhost, https://doi.org/10.1103/PhysRevLett.112.056801.
APA
Chang, C.-Z., Tang, P., Wang, Y.-L., Feng, X., Li, K., Zhang, Z., Wang, Y., Wang, L.-L., Chen, X., Liu, C., Duan, W., He, K., Ma, X.-C., & Xue, Q.-K. (2014). Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms. https://doi.org/10.1103/PhysRevLett.112.056801
Chicago
Chang, Cui-Zu, Peizhe Tang, Yi-Lin Wang, Xiao Feng, Kang Li, Zuocheng Zhang, Yayu Wang, et al. 2014. “Chemical Potential Dependent Gap-Opening at the Dirac Surface States of Bi2Se3 Induced by Aggregated Substitutional Cr Atoms.” doi:10.1103/PhysRevLett.112.056801.