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Graphene Side Gate Engineering
- Source :
- IEEE Electron Device Letters, Vol. 33, Pages 330 - 332 (2012)
- Publication Year :
- 2014
-
Abstract
- Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees well with the modeling presented.<br />Comment: 3 pages, 4 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- IEEE Electron Device Letters, Vol. 33, Pages 330 - 332 (2012)
- Publication Type :
- Report
- Accession number :
- edsarx.1410.7498
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1109/LED.2011.2180355