In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory

Authors :: Ji, B. L.
Li, H.
Ye, Q.
Gausepohl, S.
Deora, S.
Veksler, D.
Vivekanand, S.
Chong, H.
Stamper, H.
Burroughs, T.
Johnson, C.
Smalley, M.
Bennett, S.
Kaushik, V.
Piccirillo, J.
Rodgers, M.
Passaro, M.
Liehr, M.
Source :: 2015 IEEE International Memory Workshop(IMW), 17-20 May 2015 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150290&isnumber=7150256
Publication Year :: 2015
Abstract: Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.<br />Comment: 4 pages. Memory Workshop (IMW), 2015 IEEE International

Subjects :: Computer Science - Emerging Technologies
Condensed Matter - Materials Science
Physics - Data Analysis, Statistics and Probability

Database :: arXiv
Journal :: 2015 IEEE International Memory Workshop(IMW), 17-20 May 2015 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7150290&isnumber=7150256
Publication Type :: Report
Accession number :: edsarx.1509.00070
Document Type :: Working Paper
Full Text :: https://doi.org/10.1109/IMW.2015.7150290