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Synthesis, characterization and physical properties of layered bismuthide PtBi$_2$

Authors :
Xu, C. Q.
Xing, X. Z.
Xu, Xiaofeng
Che, L. Q.
Chen, Bin
Lu, Xin
Dai, Jianhui
Shi, Z. X.
Source :
Phys. Rev. B 94, 165119 (2016)
Publication Year :
2016

Abstract

We report details of single crystal growth of stoichiometric bismuthide PtBi$_2$ whose structure consists of alternate stacking of Pt layer sandwiched by Bi bilayer along the $c$-axis. The compound crystallizes in space group P-3 with a hexagonal unit cell of $a$=$b$=6.553$\AA$, $c$=6.165$\AA$. The magnetization data show opposite sign for fields parallel and perpendicular to the Pt layers, respectively. The $T$-dependent resistivity is typical of a metal and the magnetic response shows clear two types of charge carriers and the validity of the semi-classical Kohler's rule. Its physical properties was discussed in comparison with recently proposed topological superconductor $\beta$-PdBi$_2$.<br />Comment: 5 pages, 5 figures

Details

Database :
arXiv
Journal :
Phys. Rev. B 94, 165119 (2016)
Publication Type :
Report
Accession number :
edsarx.1605.08956
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.94.165119