Back to Search Start Over

Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures

Authors :
Schaibley, John R.
Rivera, Pasqual
Yu, Hongyi
Seyler, Kyle L.
Yan, Jiaqiang
Mandrus, David G.
Taniguchi, Takashi
Watanabe, Kenji
Yao, Wang
Xu, Xiaodong
Source :
Nature Communications 7, Article number: 13747 (2016)
Publication Year :
2016

Abstract

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using nondegenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in 2D spin/valleytronic devices for storing and processing information.

Details

Database :
arXiv
Journal :
Nature Communications 7, Article number: 13747 (2016)
Publication Type :
Report
Accession number :
edsarx.1612.04863
Document Type :
Working Paper
Full Text :
https://doi.org/10.1038/ncomms13747