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Photon-gated spin transistor
- Source :
- Adv. Mater. 29, 1604052 (2017)
- Publication Year :
- 2017
-
Abstract
- Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitting diode (LED) light. The manipulation of the channel conductivity is ascribed to the enhanced scattering of the spin-polarized current by photon-excited antiparallel aligned spins. And the photon-gated spin-FET shows strong light power dependence and reproducible enhancement of resistance under light illumination, indicting well-defined conductivity cycling features. Our finding would enrich the concept of spin-FET and promote the use of optical means in spintronics for low power consumption and ultrafast data processing.<br />Comment: 16 pages, 4 figures
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Adv. Mater. 29, 1604052 (2017)
- Publication Type :
- Report
- Accession number :
- edsarx.1703.01378
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1002/adma.201604052