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An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si
- Source :
- Appl. Phys. Lett. 103, 211902 (2013)
- Publication Year :
- 2017
-
Abstract
- The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface that is both oxide-free and smooth is a primary requirement for nucleating such layers. A single parameter, the AlN layer growth stress, is shown to be an early (within 50 nm), clear (<0.5 GPa versus >1 GPa) and fail-safe indicator of the pre-growth surface, and the AlN quality required for successful epitaxy. Grain coalescence model for stress generation is used to correlate growth stress, the AlN-Si interface and crystal quality.<br />Comment: 18 pages, 6 figures
- Subjects :
- Condensed Matter - Materials Science
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Appl. Phys. Lett. 103, 211902 (2013)
- Publication Type :
- Report
- Accession number :
- edsarx.1708.03809
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/1.4831968