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Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

Authors :
Sukachev, Denis D.
Sipahigil, Alp
Nguyen, Christian T.
Bhaskar, Mihir K.
Evans, Ruffin E.
Jelezko, Fedor
Lukin, Mikhail D.
Source :
Phys. Rev. Lett. 119, 223602 (2017)
Publication Year :
2017

Abstract

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date ($\sim 250$ ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV$^-$ electronic spin coherence by five orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV$^-$ symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV$^-$ spin with 89% fidelity. Coherent control of the SiV$^-$ spin with microwave fields is used to demonstrate a spin coherence time $T_2$ of 13 ms and a spin relaxation time $T_1$ exceeding 1 s at 100 mK. These results establish the SiV$^-$ as a promising solid-state candidate for the realization of scalable quantum networks.<br />Comment: 5 pages, 4 figures. Supplemental Material is available as an ancillary file

Subjects

Subjects :
Quantum Physics

Details

Database :
arXiv
Journal :
Phys. Rev. Lett. 119, 223602 (2017)
Publication Type :
Report
Accession number :
edsarx.1708.08852
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevLett.119.223602