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Strain-Tuning of the Optical Properties of Semiconductor Nanomaterials by Integration onto Piezoelectric Actuators
- Source :
- Semiconductor Science and Technology 33, 013001 (2018)
- Publication Year :
- 2017
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Abstract
- The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.<br />Comment: review manuscript, 78 pages, 27 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Semiconductor Science and Technology 33, 013001 (2018)
- Publication Type :
- Report
- Accession number :
- edsarx.1710.07374
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1088/1361-6641/aa9b53