Identifying dominant recombination mechanisms in perovskite solar cells by measuring the transient ideality factor

The ideality factor determined by measuring the open circuit voltage (VOC) as function of light intensity is often used as a means to identify the dominant recombination mechanism in solar cells. However, applying this Suns-VOC technique to perovskite cells is problematic since the VOC evolves with time in a way which depends on the previously applied bias (Vpre), the light intensity, and the device architecture/processing. Here we show that the dominant recombination mechanism in two structurally similar CH3NH3PbI3 devices containing either mesoporous Al2O3 or TiO2 layers can be identified from the signature of the transient ideality factor following application of a forward bias, Vpre, to the device in the dark. The transient ideality factor, is measured by monitoring the temporal evolution of VOC at different light intensities. The initial values of the transient ideality were consistent with corresponding photoluminescence vs intensity as well as electroluminescence vs current density measurements. Time-dependent simulations of the measurement on modelled devices, which include the effects of mobile ionic charge, show that Shockley Read Hall (SRH) recombination through deep traps at the charge collection interfaces is dominant in both devices. Using transient photovoltage measurements superimposed on the evolving VOC of bifacial devices we further show that the charge collection interface extends throughout the mesoporous TiO2 layer, consistent with a transient ideality signature corresponding to SRH recombination in the bulk of the film. This information could not be inferred from an ideality factor determined from only steady-state VOC values. The method we have developed will be useful for identifying performance bottlenecks in new variants of perovskite devices by comparison with the transient ideality signatures we have predicted for a range of possible recombination schemes.
Comment: Main manuscript and supporting information