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Effects of Proton Irradiation on 60 GHz CMOS Transceiver Chip for Multi-Gbps Communication in High-Energy Physics Experiments
- Source :
- The Journal of Engineering, 2019
- Publication Year :
- 2018
-
Abstract
- This paper presents the experimental results of $17~MeV$ proton irradiation on a $60~GHz$ low power, half-duplex transceiver (TRX) chip implemented in $65~nm$ CMOS technology. It supports short range point-to-point data rate up to $6~Gbps$ by employing on-off keying (OOK). To investigate the irradiation hardness for high energy physics applications, two TRX chips were irradiated with total ionizing doses (TID) of $74~kGy$ and $42~kGy$ and fluence of $1.4~\times$10$^{14}~ N_{eq}/cm^2$ and $0.8~\times$10$^{14}~N_{eq}/cm^2$ for RX and TX modes, respectively. The chips were characterized by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at $5~Gbps$. Moreover, very small shift in the carrier frequency was observed after the irradiation.<br />Comment: Accepted on 25th March 2019, 6 pages
- Subjects :
- Physics - Instrumentation and Detectors
High Energy Physics - Experiment
Subjects
Details
- Database :
- arXiv
- Journal :
- The Journal of Engineering, 2019
- Publication Type :
- Report
- Accession number :
- edsarx.1810.11842
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1049/joe.2018.5402