Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology

MLA

Chandrasekar, Hareesh, et al. Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology. 2019. EBSCOhost, https://doi.org/10.1109/TED.2019.2896156.

APA

Chandrasekar, H., Uren, M. J., Casbon, M. A., Hirshy, H., Eblabla, A., Elgaid, K., Pomeroy, J. W., Tasker, P. J., & Kuball, M. (2019). Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology. https://doi.org/10.1109/TED.2019.2896156

Chicago

Chandrasekar, Hareesh, Michael J. Uren, Michael A. Casbon, Hassan Hirshy, Abdalla Eblabla, Khaled Elgaid, James W. Pomeroy, Paul J. Tasker, and Martin Kuball. 2019. “Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology.” doi:10.1109/TED.2019.2896156.