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Nonlinear planar Hall effect
- Source :
- Phys. Rev. Lett. 123, 016801 (2019)
- Publication Year :
- 2019
-
Abstract
- An intriguing property of three-dimensional (3D) topological insulator (TI) is the existence of surface states with spin-momentum locking, which offers a new frontier of exploration in spintronics. Here, we report the observation of a new type of Hall effect in a 3D TI Bi2Se3 film. The Hall resistance scales linearly with both the applied electric and magnetic fields and exhibits a {\pi}/2 angle offset with respect to its longitudinal counterpart, in contrast to the usual angle offset of {\pi}/4 between the linear planar Hall effect and the anisotropic magnetoresistance. This novel nonlinear planar Hall effect originates from the conversion of a nonlinear transverse spin current to a charge current due to the concerted actions of spin-momentum locking and time reversal symmetry breaking, which also exists in a wide class of non-centrosymmetric materials with a large span of magnitude. It provides a new way to characterize and utilize the nonlinear spin-to-charge conversion in a variety of topological quantum materials.
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Lett. 123, 016801 (2019)
- Publication Type :
- Report
- Accession number :
- edsarx.1906.06462
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevLett.123.016801