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Deep levels analysis in wavelength extended InGaAsBi photodetector
- Publication Year :
- 2019
-
Abstract
- InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at Ec -0.33 eV, Ev +0.14 eV, and Ec -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.
- Subjects :
- Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.1906.07352
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1088/1361-6641/ab3539