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In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
- Source :
- Phys. Rev. Research 3, 033253 (2021)
- Publication Year :
- 2020
-
Abstract
- Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Phys. Rev. Research 3, 033253 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2008.06003
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1103/PhysRevResearch.3.033253