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Global strain-induced scalar potential in graphene devices
- Source :
- Comm. Phys. 4, 147 (2021)
- Publication Year :
- 2020
-
Abstract
- By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distortion is an energy shift of the Dirac point, often described as a scalar potential. We demonstrate how such a scalar potential can be generated systematically over an entire electronic device and how the resulting changes in the graphene work function can be detected in transport experiments. Combined with Raman spectroscopy, we obtain a characteristic scalar potential consistent with recent theoretical estimates. This direct evidence for a scalar potential on a macroscopic scale due to deterministically generated strain in graphene paves the way for engineering the optical and electronic properties of graphene and similar materials by using external strain.
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Comm. Phys. 4, 147 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2009.03035
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s42005-021-00651-y