ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory

MLA

Mukherjee, Bablu, et al. ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory. 2020. EBSCOhost, https://doi.org/10.1002/aelm.202000925.

APA

Mukherjee, B., Hayakawa, R., Watanabe, K., Taniguchi, T., Nakaharai, S., & Wakayama, Y. (2020). ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory. https://doi.org/10.1002/aelm.202000925

Chicago

Mukherjee, Bablu, Ryoma Hayakawa, Kenji Watanabe, Takashi Taniguchi, Shu Nakaharai, and Yutaka Wakayama. 2020. “ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory.” doi:10.1002/aelm.202000925.