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Electronic structure and transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films
- Source :
- Ceramics Interantional 2021
- Publication Year :
- 2021
-
Abstract
- High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e., the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies.
- Subjects :
- Condensed Matter - Materials Science
Subjects
Details
- Database :
- arXiv
- Journal :
- Ceramics Interantional 2021
- Publication Type :
- Report
- Accession number :
- edsarx.2101.09633
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1016/j.ceramint.2021.04.026