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Metal-insulator-like transition, superconducting dome and topological electronic structure in Ga-doped Re$_{3}$Ge$_{7}$
- Source :
- npj Quantum Materials 6, 74 (2021)
- Publication Year :
- 2021
-
Abstract
- Superconductivity frequently appears by doping compounds that show a collective phase transition. So far, however, this has not been observed in topological materials. Here we report the discovery of superconductivity induced by Ga doping in orthorhombic Re$_{3}$Ge$_{7}$, which undergoes a second-order metal-insulator-like transition at $\sim$58 K and is predicted to have a nontrivial band topology. It is found that the substitution of Ga for Ge leads to hole doping in Re$_{3}$Ge$_{7-x}$Ga$_{x}$. As a consequence, the phase transition is gradually suppressed and disappears above $x$ = 0.2. At this $x$ value, superconductivity emerges and $T_{\rm c}$ exhibits a dome-like doping dependence with a maximum value of 3.37 K at $x$ = 0.25. First-principles calculations suggest that the phase transition in Re$_{3}$Ge$_{7}$ is associated with an electronic instability driven by Fermi surface nesting and the nontrival band topology is preserved after Ga doping. Our results indicate that Ga-doped Re$_{3}$Ge$_{7}$ provides a rare opportunity to study the interplay between superconductivity and competing electronic states in a topologically nontrivial system.<br />Comment: 11 pages, 7 figures
- Subjects :
- Condensed Matter - Superconductivity
Subjects
Details
- Database :
- arXiv
- Journal :
- npj Quantum Materials 6, 74 (2021)
- Publication Type :
- Report
- Accession number :
- edsarx.2105.06028
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41535-021-00372-z