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Tuning carrier density and phase transitions in oxide semiconductors using focused ion beams
- Publication Year :
- 2022
-
Abstract
- We demonstrate spatial modification of the optical properties of thin-film metal oxides, zinc oxide and vanadium dioxide as representatives, using a commercial focused ion beam (FIB) system. Using a Ga+ FIB and thermal annealing, we demonstrated variable doping of a band semiconductor, zinc oxide (ZnO), achieving carrier concentrations from 10^18 cm-3 to 10^20 cm-3. Using the same FIB without subsequent thermal annealing, we defect-engineered a correlated semiconductor, vanadium dioxide (VO2), locally modifying its insulator-to-metal transition (IMT) temperature by range of ~25 degrees C. Such area-selective modification of metal oxides by direct writing using a FIB provides a simple, mask-less route to the fabrication of optical structures, especially when multiple or continuous levels of doping or defect density are required.<br />Comment: Main text + supplementary. Updated manuscript with some more science
- Subjects :
- Condensed Matter - Materials Science
Physics - Applied Physics
Physics - Optics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2202.01777
- Document Type :
- Working Paper