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Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
- Source :
- Scientific Reports 12, 15200 (2022)
- Publication Year :
- 2022
-
Abstract
- The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish a rare but practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform.<br />Comment: 23 pages, 6 figures
- Subjects :
- Quantum Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Scientific Reports 12, 15200 (2022)
- Publication Type :
- Report
- Accession number :
- edsarx.2202.04281
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41598-022-19404-0