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Adaptive Read Thresholds for NAND Flash

Authors :
Peleato, Borja
Agarwal, Rajiv
Cioffi, John
Qin, Minghai
Siegel, Paul H.
Source :
IEEE Transactions on Communications ( Volume: 63, Issue: 9, Sept. 2015, Pages: 3069 - 3081)
Publication Year :
2022

Abstract

A primary source of increased read time on NAND flash comes from the fact that in the presence of noise, the flash medium must be read several times using different read threshold voltages for the decoder to succeed. This paper proposes an algorithm that uses a limited number of re-reads to characterize the noise distribution and recover the stored information. Both hard and soft decoding are considered. For hard decoding, the paper attempts to find a read threshold minimizing bit-error-rate (BER) and derives an expression for the resulting codeword-error-rate. For soft decoding, it shows that minimizing BER and minimizing codeword-error-rate are competing objectives in the presence of a limited number of allowed re-reads, and proposes a trade-off between the two. The proposed method does not require any prior knowledge about the noise distribution, but can take advantage of such information when it is available. Each read threshold is chosen based on the results of previous reads, following an optimal policy derived through a dynamic programming backward recursion. The method and results are studied from the perspective of an SLC Flash memory with Gaussian noise for each level but the paper explains how the method could be extended to other scenarios.

Details

Database :
arXiv
Journal :
IEEE Transactions on Communications ( Volume: 63, Issue: 9, Sept. 2015, Pages: 3069 - 3081)
Publication Type :
Report
Accession number :
edsarx.2202.05661
Document Type :
Working Paper
Full Text :
https://doi.org/10.1109/TCOMM.2015.2453413