Back to Search
Start Over
Modified interlayer stacking and insulator to correlated-metal transition driven by uniaxial strain in 1$T$-TaS$_{2}$
- Publication Year :
- 2022
-
Abstract
- Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS$_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy (ARPES) to reveal the effect of uniaxial strain engineering on the electronic structure and interlayer coupling in 1$T$-TaS$_2$ . The normally insulating ground state is transformed into a correlated-metal phase under strain, as evidenced by the emergence of a narrow band at the Fermi level. Temperature dependent ARPES measurements reveal that the metallic behaviour only develops below the commensurate charge density wave (CCDW) transition, where interlayer dimerization produces a band-insulator in unstrained samples. Electronic structure calculations demonstrate that the correlated metallic behaviour is stabilized by a previously predicted but unobserved bulk stacking structure with a modified interlayer coupling of the Ta d$_{z^{2}}$ electrons. Our combined approach lays bare the role of correlations and interlayer coupling in 1$T$-TaS$_2$ , providing critical input for understanding superconductivity under pressure and the metastable hidden phase induced using non-equilibrium protocols in this platform material for correlated physics.<br />Comment: Combined main article and supplementary information
- Subjects :
- Condensed Matter - Strongly Correlated Electrons
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2204.05598
- Document Type :
- Working Paper