Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

MLA

Zeng, Bolun, et al. Characterization of GaN-Based HEMTs Down to 4.2 K for Cryogenic Applications. 2022. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2204.09216&authtype=sso&custid=ns315887.

APA

Zeng, B., Zhang, H., Xiang, Z., Luo, C., Zhang, Y., Weng, M., Xue, Q., Hu, S., Sun, Y., Yang, L., Sun, H., & Guo, G. (2022). Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications.

Chicago

Zeng, Bolun, Haochen Zhang, Zikun Xiang, Chao Luo, Yuanke Zhang, Mingjie Weng, Qiwen Xue, et al. 2022. “Characterization of GaN-Based HEMTs Down to 4.2 K for Cryogenic Applications.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2204.09216&authtype=sso&custid=ns315887.