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Evidence of the disorder-independent electron-phonon scattering time in thin NbN films

Authors :
Lomakin, A. I.
Baeva, E. M.
Triznova, A. D.
Titova, N. A.
Zolotov, P. I.
Semenov, A. V.
Sunegin, D. E.
Lubenchenko, A. V.
Kolbatova, A. I.
Goltsman, G. N.
Publication Year :
2022

Abstract

We report on experimental study of the effect of disorder on electronic parameters and inelastic scattering mechanisms in ultrathin superconducting NbN films, which are commonly used in single-photon detectors. An increase in disorder in the studied 2.5 nm thick NbN films characterized by Ioffe-Regel parameter from 6.3 to 1.6 is accompanied by a decrease in the critical temperature $T_c$ from 11.5 K to 3.4 K. By measuring magnetoconductance in the range from $T_c$ to $\sim3T_c$, we extract the inelastic scattering rates of electrons, including electron-phonon (e-ph) scattering rates $\tau_{e-ph}^{-1}$. We observe that $\tau_{e-ph}^{-1}$ and their temperature dependencies are insensitive to disorder that is not described by the existing models of the e-ph scattering in disordered metals and can be due to the presence of weakly disordered metal grains. As the temperature decreases the temperature dependence $\tau_{e-ph}^{-1}$ changes from $T^3$ to $T^2$, which can be result of a decrease in the dimension of the phonons involved in the e-ph scattering. The obtained values of material parameters of ultrathin NbN films can be useful for optimization of performance of NbN-based electronic devices.<br />Comment: 14 pages, 9 figures

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2207.05012
Document Type :
Working Paper
Full Text :
https://doi.org/10.1103/PhysRevB.107.054205