Back to Search
Start Over
Field-controlled quantum anomalous Hall effect in electron-doped CrSiTe$_{ 3 }$ monolayer: a first-principles prediction
- Source :
- npj 2D Materials and Applications 7, 13 (2023)
- Publication Year :
- 2022
-
Abstract
- We report Chern insulating phases emerging from a single layer of layered chalcogenide CrSiTe$_{3}$, a transition metal trichacogenides (TMTC) material, in the presence of charge doping. Due to strong hybridization with Te $p$ orbitals, the spin-orbit coupling effect opens a finite band gap, leading to a nontrivial topology of the Cr $e_{\mathrm{g}}$ conduction band manifold with higher Chern numbers. Our calculations show that quantum anomalous Hall effects can be realized by adding one electron in a formula unit cell of Cr$_{2}$Si$_{2}$Te$_{6}$, equivalent to electron doping by 2.36$\times$10$^{14}$ cm$^{-2}$ carrier density. Furthermore, the doping-induced anomalous Hall conductivity can be controlled by an external magnetic field via spin-orientation-dependent tuning of the spin-orbit coupling. In addition, we find distinct quantum anomalous Hall phases employing tight-binding model analysis, suggesting that CrSiTe$_{3}$ can be a fascinating new platform to realize Chern insulating systems with higher Chern numbers.<br />Comment: 9 pages, 8 figures, and additional supplementary information
Details
- Database :
- arXiv
- Journal :
- npj 2D Materials and Applications 7, 13 (2023)
- Publication Type :
- Report
- Accession number :
- edsarx.2208.02997
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41699-023-00375-3