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Proton radiation damage tolerance of wide dynamic range SOI pixel detectors

Authors :
Tsunomachi, Shun
Kohmura, Takayoshi
Hagino, Kouichi
Kitajima, Masatoshi
Doi, Toshiki
Aoki, Daiki
Ohira, Asuka
Shimizu, Yasuyuki
Fujisawa, Kaito
Yamazaki, Shizusa
Uchida, Yuusuke
Shimizu, Makoto
Itoh, Naoki
Arai, Yasuo
Miyoshi, Toshinobu
Nishimura, Ryutaro
Tsuru, Takeshi Go
Kurachi, Ikuo
Publication Year :
2022

Abstract

We have been developing the SOI pixel detector ``INTPIX'' for space use and general purpose applications such as the residual stress measurement of a rail and high energy physics experiments. INTPIX is a monolithic pixel detector composed of a high-resistivity Si sensor, a SiO2 insulator, and CMOS pixel circuits utilizing Silicon-On-Insulator (SOI) technology. We have considered the possibility of using INTPIX to observe X-ray polarization in space. When the semiconductor detector is used in space, it is subject to radiation damage resulting from high-energy protons. Therefore, it is necessary to investigate whether INTPIX has high radiation tolerance for use in space. The INTPIX8 was irradiated with 6 MeV protons up to a total dose of 2 krad at HIMAC, National Institute of Quantum Science in Japan, and evaluated the degradation of the performance, such as energy resolution and non-uniformity of gain and readout noise between pixels. After 500 rad irradiation, which is the typical lifetime of an X-ray astronomy satellite, the degradation of energy resolution at 14.4 keV is less than 10%, and the non-uniformity of readout noise and gain between pixels is constant within 0.1%.<br />Comment: 7 pages, 8 figures, published in proceedings for SPIE Astronomical Telescopes + Instrumentation in 2022

Details

Database :
arXiv
Publication Type :
Report
Accession number :
edsarx.2209.03636
Document Type :
Working Paper