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Flopping-mode spin qubit in a Si-MOS quantum dot
- Source :
- Applied Physics Letters 122, 134002 (2023)
- Publication Year :
- 2022
-
Abstract
- Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.<br />Comment: 5 pages, 4 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Quantum Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Applied Physics Letters 122, 134002 (2023)
- Publication Type :
- Report
- Accession number :
- edsarx.2209.14531
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1063/5.0137259