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A novel $\sqrt{19}\times\sqrt{19}$ superstructure in epitaxially grown 1T-TaTe$_2$

Authors :
Hwang, Jinwoong
Jin, Yeongrok
Zhang, Canxun
Zhu, Tiancong
Kim, Kyoo
Zhong, Yong
Lee, Ji-Eun
Shen, Zongqi
Chen, Yi
Ruan, Wei
Ryu, Hyejin
Hwang, Choongyu
Lee, Jaekwang
Crommie, Michael F.
Mo, Sung-Kwan
Shen, Zhi-Xun
Source :
Advanced materials 34, 2204579 (2022)
Publication Year :
2022

Abstract

The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in two-dimensional materials. We report a novel $\sqrt{19}\times\sqrt{19}$ charge order in few-layer thick 1T-TaTe$_2$ transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized. Our photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe$_2$ exhibits a variety of metastable charge density wave orders, including the $\sqrt{19}\times\sqrt{19}$ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, we find that only the $\sqrt{19}\times\sqrt{19}$ order persists in 1T-TaTe$_2$ films thicker than a monolayer, up to 8 layers. Our findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.

Details

Database :
arXiv
Journal :
Advanced materials 34, 2204579 (2022)
Publication Type :
Report
Accession number :
edsarx.2210.02010
Document Type :
Working Paper
Full Text :
https://doi.org/10.1002/adma.202204579