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Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function
- Source :
- Nat Commun 15, 2296 (2024)
- Publication Year :
- 2023
-
Abstract
- The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrm{\mu}$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.<br />Comment: 11 pages, 6 figures
- Subjects :
- Condensed Matter - Mesoscale and Nanoscale Physics
Quantum Physics
Subjects
Details
- Database :
- arXiv
- Journal :
- Nat Commun 15, 2296 (2024)
- Publication Type :
- Report
- Accession number :
- edsarx.2306.16375
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1038/s41467-024-46519-x