Back to Search Start Over

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Authors :
Xue, Ran
Beer, Max
Seidler, Inga
Humpohl, Simon
Tu, Jhih-Sian
Trellenkamp, Stefan
Struck, Tom
Bluhm, Hendrik
Schreiber, Lars R.
Source :
Nat Commun 15, 2296 (2024)
Publication Year :
2023

Abstract

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrm{\mu}$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrm{\mu}$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.<br />Comment: 11 pages, 6 figures

Details

Database :
arXiv
Journal :
Nat Commun 15, 2296 (2024)
Publication Type :
Report
Accession number :
edsarx.2306.16375
Document Type :
Working Paper
Full Text :
https://doi.org/10.1038/s41467-024-46519-x