Cite
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
MLA
Ryu, Hojoon, et al. Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO. 2023. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2307.10473&authtype=sso&custid=ns315887.
APA
Ryu, H., Kang, J., Park, M., Bae, B., Zhao, Z., Rakheja, S., Lee, K., & Zhu, W. (2023). Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO.
Chicago
Ryu, Hojoon, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, and Wenjuan Zhu. 2023. “Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsarx&AN=edsarx.2307.10473&authtype=sso&custid=ns315887.