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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy
- Publication Year :
- 2023
-
Abstract
- The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve linearly graded pseudomorph Ge1-xSnx compositions up to 10 % before partial relaxation of the structure and a continued gradient up to 16 % GeSn. In this report, we use X-ray diffraction, simulation, SIMS and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first demonstration of algorithmically driven, linearly graded GeSn films.<br />Comment: Final Version
- Subjects :
- Condensed Matter - Materials Science
Physics - Applied Physics
Subjects
Details
- Database :
- arXiv
- Publication Type :
- Report
- Accession number :
- edsarx.2309.06695
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.3390/nano14110909